DMP2100UCB9-7【PDF 2/6 页】MOSFET P CH 20V 3A U-WLB1515-9

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DMP2100UCB9

Maximum Ratings (@T A = +25°C, unless otherwise specified.)

Drain-Source Voltage

Gate-Source Voltage

Characteristic

Symbol

V D1D2

V GS

Value

-20

-6

Units

V

V

Continuous Drain Current (Note 5) V GS = -4.5V

Continuous Drain Current (Note 6) V GS = -4.5V

Steady

State

Steady

State

T C = +25°C

T C = +70°C

T C = +25°C

T C = +70°C

I D1D2

I D1D2

-3.0

-2.1

-4.0

-3.0

A

A

Continuous Source Pin Current (Note 6)

Continuous Gate Clamp Current (Note 6)

Pulsed Source Pin Current (Pulse duration 10 μ s, duty cycle ≤ 1%)

Pulsed Drain Current (Pulse duration 10 μ s, duty cycle ≤ 1%)

Pulsed Gate Clamp Current (Pulse duration 10 μ s, duty cycle ≤ 1%)

I S

I G

I SM

I DM

I GM

-2.0

-0.4

-15

-28

-6

A

A

A

A

A

Thermal Characteristics (@T A = +25°C, unless otherwise specified.)

Characteristic

Total Power Dissipation (Note 5)

Total Power Dissipation (Note 6)

Thermal Resistance, Junction to Ambient (Note 5)

Thermal Resistance, Junction to Ambient (Note 6)

Operating and Storage Temperature Range

Symbol

P D

P D

R θ JA

R θ JA

T J, T STG

Value

0.8

1.6

152

65

-55 to +150

Units

W

W

°C/W

°C/W

°C

Electrical Characteristics (@T A = +25°C, unless otherwise specified.)

Characteristic

Symbol

Min

Typ

Max

Unit

Test Condition

OFF CHARACTERISTICS (Note 7)

Drain-Source Breakdown Voltage

Gate-Source Breakdown Voltage

BV D1D2

BV GSS

-20

-6.1

—

—

—

—

V

V

V GS = 0V, I D1D2 = -250 μ A

I GS = -250 μ A, V D1D2 = 0V

Zero Gate Voltage Drain Current

Gate-Source Leakage

@T C = +25°C

I DDS

I GSS

—

—

—

—

-1

-100

μ A

nA

V D1D2 = -16V, V GS = 0V

V GS = -6V, V DS = 0V

ON CHARACTERISTICS (Note 7)

Gate Threshold Voltage

V GS(th)

-0.4

-0.7

-0.9

V

V D1D2 = V GS , I DS = -250 μ A

—

80

100

V GS = -4.5V, I D1D2 =- 1A

Static Drain-Source On-Resistance

R D1D2(ON)

—

105

130

m ?

V GS = -2.5V, I D1D2 = -1A

—

140

175

V GS = -1.8V, I D1D2 = -1A

Forward Transfer Admittance

|Y fs |

—

5.3

—

S

V D1D2 = -10V, I D1D2 = -1A

DIODE CHARACTERISTICS

Diode Forward Voltage (Note 6)

Reverse Recovery Charge

Reverse Recovery Time

V SD

Q rr

t rr

—

—

—

-0.7

18

34

-1

—

—

V

nC

ns

V GS = 0V, I D1D2 = -1A

V dd = -9.5V, I F = -1A,

di/dt = 200A/ μ s

DYNAMIC CHARACTERISTICS (Note 8)

Input Capacitance

Output Capacitance

Reverse Transfer Capacitance

Total Gate Charge (4.5V)

Gate-Source Charge

Gate-Drain Charge

Gate Charge at V th

Turn-On Delay Time

Turn-On Rise Time

Turn-Off Delay Time

Turn-Off Fall Time

C iss

C oss

C rss

Q g

Q gs

Q gd

Q g(th)

t D(on)

t r

t D(off)

t f

—

—

—

—

—

—

—

—

—

—

—

232

107

43.5

3.3

0.3

0.6

0.2

8.5

7.0

47

28

310

150

55

4.2

—

—

—

—

—

—

—

pF

pF

pF

nC

nC

nC

nC

ns

ns

ns

ns

V D1D2 = -10V, V GS = 0V,

f = 1.0MHz

V GS = -4.5V, V D1D2 = -10V,

I D1D2 = -1A

V D1D2 = -10V, V GS = -4.5V,

I D1D2 = -1A, R G = 30 ? ,

Notes:

5. Device mounted on FR-4 PCB with minimum recommended pad layout.

6. Device mounted on FR4 material with 1-inch 2 (6.45-cm 2 ), 2-oz. (0.071-mm thick) Cu

7. Short duration pulse test used to minimize self-heating effect.

8. Guaranteed by design. Not subject to production testing.

DMP2100UCB9

Document number: DS35725 Rev. 3 - 2

2 of 6

www.diodes.com

July 2013

? Diodes Incorporated

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